Comparison between BJT and MOSFET

Sr#	Bi-Polar Junction Transistor (BJT)	Metal Oxide Field Effect Transistor (MOSFET)
1	It is a Bipolar Device	It is the majority carrier Device
2	Current control Device	Voltage control Device.
3	Output is controlled by controlling the base current	Output is controlled by controlling gate voltage
4	Negative temperature coefficient	Positive temperature coefficient
5	So, paralleling BJT is difficult.	So, paralleling this device is easy.
6	The dive circuit is complex. It should provide	The dive circuit is simple. It should provide
7	constant current (Base current)	constant voltage (gate voltage)
8	Losses are low.	Losses are higher than BJTs.
9	So used in high-power applications.	Used in low-power applications.
10	BJTs have high voltage and current ratings.	They have less voltage and current ratings.
11	The switching frequency is lower than MOSFET.	The switching frequency is high.